Richard Hogg, chief technical officer of UK-based company III-V Epi, is advocating using GaAs epitaxial regrowth for many emerging, semiconductor laser applications.

Electrical measurements on these diodes revealed that increasing their temperature from ambient to 573K produces a fall in ...

Efficient Power Conversion Corporation (EPC) has introduced the GaN-based EPC91200, a fully configured motor drive inverter ...

David Marshall, as director of programmes, will oversee Filtronic’s portfolio of critical programmes, driving strategic ...

The US Department of Commerce has signed a preliminary memorandum of terms with Macom Technology to provide up to $70 million ...

Preparing to offer just that in significant volume within the next few years is the Israeli-based producer of GaN power ...

Researchers at the Fraunhofer Institute for Photonic Microsystems IPMS have developed novel OLED stacks that enable ...

Compound Semiconductor™ is an Angel Business Communications publication.

Researchers at Osaka University have demonstrated that low-temperature post-deposition annealing slashes the density of hole ...

Increasing module efficiency and expanding manufacturing capacity play complementary roles in reducing costs of metal halide ...

The proposed SiC fab will launch with a production capacity of 10,000 wafers per month, rising to 50,000 wafers per month ...