MUNICH – Infineon Technologies AG in Munich is introducing the CoolGaN 650 V G5 family of high-voltage transistors for industrial applications in USB-C adapters, chargers, and renewable energy. The ...

Perovskites are a class of materials with a unique crystal structure that suits applications such as fabricating solar cells, light-emitting diodes and transistors. However, molecules in thin layers ...

Prioritize application-specific IGBTs, advanced cooling and packaging, AI-enabled monitoring, lifecycle efficiency, and diversified regional supply chains.Dublin, Oct. (GLOBE NEWSWIRE) -- ...

High-performance field effect transistors (FETs) demand efficient charge doping alongside superior charge transport, which has proven challenging for p-type two ...

Optoelectronics, the use of electronic devices for the detection and control of light, has become a preferred means for broadband and transoceanic communication networks. Below is a sneak peek at the ...

This application note presents the new 1600 V BIMOSFET transistor giving way to new applications. It presents the many applications of BIMOSFET and its DC electrical performance. This application note ...

Transistors that can change properties are important elements in the development of tomorrow's semiconductors. With standard transistors approaching the limit for how small they can be, having more ...

The objective of the proposed work is to design and demonstrate high frequency Beta-Gallium Oxide based transistors. Silicon based electronics is ubiquitous and provides excellent performance for many ...

Four new devices target humanoid robots and industrial systems, offering silicon-compatible footprints and claimed switching-loss cuts of 40–70%.

Target SiC and GaN innovation, EVs, renewables, IoT and smart grids to capture demand for efficient, reliable power management.Dublin, Oct. 19, 2026 (GLOBE NEWSWIRE) -- "Power Transistors - Global ...

In this article, we propose the use of a Silicon/(3-aminopropyl)triethoxysilane (APS)/methylammonium lead iodide (MAPbI3) Heterostructure in a field-effect transistor for the first time. In the ...