Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress
Many efficient light-emitting devices and photodetectors are based on semiconductors with, respectively, a direct or indirect bandgap configuration. The less known pseudodirect bandgap configuration ...
Recently, the group of professor ZHANG Yongsheng from the Institute of Solid State Physics, Hefei Institutes of Physical Science (HFIPS), Chinese Academy of Sciences (CAS) identified the orbital ...
Researchers at Lund University, Sweden, have grown single continuous GaAs nanowires consisting of segments of pure wurtzite and zincblende phases. Using photoluminescence spectroscopy, they found that ...
Gapless semiconductors are a very new class of solids in which the conduction and valence bands meet at the Fermi level. As a result of this structure, the threshold energy needed for electrons to ...
Bandgap refers to a region of an element’s crystal’s electronic band structure through which electrons can’t pass. Also referred to as an energy gap, bandgap is a concept in solid-state physics and ...
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